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| AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description The AO4447AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. -RoHS Compliant -Halogen Free Features VDS (V) = -30V ID = -17A RDS(ON) < 7m RDS(ON) < 8m RDS(ON) < 9m (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -4V) ESD Protected! SOIC-8 D Rg D G G S S Absolute Maximum Ratings TJ=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -30 20 -17 -13 -160 3.1 2.0 -55 to 150 Typ 31 59 16 Max 40 75 24 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG Symbol A AD W C Units C/W C/W C/W Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead t 10s Steady State Steady State RJA RJL Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID =-250A, VGS = 0V VDS =-30V, VGS = 0V TJ = 55C VDS = 0V, VGS =16V VDS =VGS ID =-250A VGS =-10V, VDS =-5V VGS =-10V, ID =-17A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS =-4.5V, ID =-15A VGS =-4V, ID =-13A gFS VSD IS Forward Transconductance VDS =-5V, ID =-17A Diode Forward Voltage IS =-1A,VGS = 0V Maximum Body-Diode Continuous Current -0.8 -160 5.5 7 6.5 6.9 70 -0.62 -1 -3 4580 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 755 564 160 87 VGS=-10V, VDS=-15V, ID=-17A 41 12.8 17 180 VGS=-10V, VDS=15V RL=-0.9, RGEN=3 IF=-17A, dI/dt=300A/s 260 1.2 9.7 32 77 40 210 105 5500 7 8.5 8 9 S V A pF pF pF nC nC nC nC ns ns s s ns nC m -1.3 Min -30 -1 -5 10 -1.6 Typ Max Units V A A V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial T J =25C. D. The RJA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. #REF! F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev 0: Aug 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 140 120 100 -ID (A) 80 60 40 20 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics(Note E) 10 Normalized On-Resistance 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 1E+02 ID= -17A 16 RDS(ON) (m) 12 125C IS (A) 1E+01 1E+00 1E-01 VGS= -4.5V ID= -15A VGS= -10V ID= -17A VGS= -2.5V 0 0 1 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -3V -ID(A) -10V -4V -3.5V 80 100 VDS=-5V 60 40 125C 25C 20 8 RDS(ON) (m) VGS=-4V 6 VGS=-4.5V VGS=-10V 4 2 0 5 10 15 IF=-6.5A, dI/dt=100A/s 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 20 125C 8 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 4 25C OUT OF SUCH APPLICATIONS OR USES OF 25C ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 1E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics(Note E) Voltage(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID= -17A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 Crss 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Ciss 1000 100 -ID (Amps) 10 1 0.1 DC TJ(Max)=150C TA=25C 0.1 F 1 -VDS (Volts) 1000 TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1m 10ms 100ms 10s Power (W) 100 10 0.01 0.01 I =-6.5A, dI/dt=100A/s 10 100 1 0.00001 0.001 0.1 10 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL Gate Charge Test Circuit & Waveform Vgs Qg -10V VDC VDC DUT Vgs Ig Resistive Switching Test Circuit & Waveforms RL Vds Vgs Vgs Rg Vgs Vds DUT VDC Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs t rr Vds - Isd Vgs L VDC + Vdd -Vds Ig Alpha & Omega Semiconductor, Ltd. + - + Charge t on td(on) tr t d(off) t off tf - + - Vds Qgs Qgd Vdd 90% 10% Q rr = - Idt -Isd -I F dI/dt -I RM Vdd www.aosmd.com |
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